Speaker: Prof. Jing Guo

Department of ECE, University of Florida, USA

Time: 2:00-4:00pm, June 16

Venue: Seminar Room 108-109, Admin. Building

Organizer: Innovative Institute of Electromagnetic Information and Electronic Integration

Abstract: In recent years, significant progress has been achieved in exploring electronics applications of two-dimensional monolayer materials. Monolayer represents the ultimate limit of body thickness in a transistor structure, and it is free from body thickness variability and interface dangling bonds. Its mechanical bendability promises interesting applications in flexible and wearable electronics. Furthermore, two-dimensional materials and their heterojunctions possess properties not available in their conventional semiconductor counterparts. To translate the new material properties to device technologies, device modeling and simulation play an important role in understanding experiments, assessing technology potential, and optimizing device designs.

In this talk, I will first overview the challenges of modeling electron devices made from nanomaterials. Two examples of devices based on two-dimensional semiconductors will then be highlighted. In the first one, anisotropic carrier transport in black phosphorene will be examined to understand their potential in logic and RF transistor applications. In the second example, device physics and design options of monolayer heterojunction photodiodes and tunneling field-effect transistors will be discussed, which promise ultra steep subthreshold swing and low power dissipation.

Biography: Jing Guo is currently a Professor in Department of Electrical and Computer Engineering at University of Florida. He received his Ph.D. degree in electrical engineering from Purdue University, West Lafayette, IN. His research interests focus on modeling and simulation of nanoscale electron device, quantum transport phenomena, optoelectronic and spintronic devices. He has published over 100 peer-reviewed journal papers in journals including Science and Nature. He is a recipient of the US National Science Foundation (NSF) CAREER Award. He served in many technical program committees including the International Electron Device Meeting (IEDM) in 2007-2008 and 2012-2013. He is the coauthor of the book,"Nanoscale Transistors: Device Physics, Modeling, and Simulation" published by Springer.